GERMANIUM NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially grown with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the composition is cycled by means of oxidizing and annealing levels. Because of the preferential oxidation of Si about Ge [68], the initial Si1–summary = "We evaluate the optical acquire of tensile-strained, n-type Ge prod